[MUSIC] In this appendix, we will look to the interface layers, which have been mentioned for thin film solar cell preparation. These layer are made from transparent conductive oxides, TCO. This layer are used as electrodes, which are required to collect the carriers Since there are thin silicon layers are deposit on glass, which is an insulator. This electrode will be transparent since it is exposed to sunlight on conductive. In terms of square conductivity, resistance should be less than ten ohm square. How to satisfy both requirements? Transparent means that the band gap of the material is more than three electron volt, so as to absorb the sunlight spectrum. It must be conductive, which means that it must be doped. Such thin film material, or oxide materials, tin oxide, indium, or zinc oxide, always doped. These thin layers are deposited on the front surface exposed to the sun, on top of the active layer. As an example, the transmission of zinc oxide, ZnO, doped with aluminium is presented here. The band gap is large so that it does not absorb visible photons, as seen here on the right. At high wavelength, inbound absorption is observed depending on the doping which effects reflected photons. These layers are used to prepare surfaces, but they are used as electrode application, such as flat played displays. They are also associated with architectural glass, or for thermal insulation. This layer may be deposited on glass, in large area, several square meters. The properties of various transparent conductive layers are summarized in this table. The most widely used is ITO, indium tin oxide, indium oxide doped with tin. Its many applications, including flat panel TV, now create an indium resource problem, which has obvious economic consequences. One can also use tin oxide doped with fluorine, TinO2. For PV application, it has the advantage of being textured during the position. Zinc oxide doped with aluminum can also be used. As compared to tin oxide, zinc oxide is more resistant to chemical radiation. Amorphous silicon, or nanocrystalline silicon are deposited for very reductive silent plasmas, possibly derooted in hydrogen. With the presence of atomic hydrogen, a Bischler reduction of the oxide leads to emit which reduces the transmission of the front window. These oxides can be deposited from gaseous precursor, by the glass oxide, CVD method, at low pressure, LPCVD, of metal organic compounds, MOCVD. But the most popular method is sputtering on large area which is illustrated in the following animations. The sputtering is based on the use of a metal target as shown in this animation. Plasma, in red, produces AV ions such as argon. These heavy ions will be accelerated toward the metallic target, impinging on metal atoms, in gray, that will then be back-scattered towards the glass substrate on top, leading to the growth of a metallic layer. If one introduces oxygen in the gas mixture with argon, the plasma becomes reactive and the metal atoms will be oxidized. The final result will be the growth of a thin layer on the glass of oxide. In summary, we treated during these six chapters, the physics of solar cells based on crystalline semiconductors, mostly silicon, including heterojunctions. Let's repeat again, that the crystalline silicon is currently the dominant technology in the worldwide market. Thank you. [MUSIC]